High Breakdown-Voltage and High-Linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels

Paper #:
  • 1999-01-2492

Published:
  • 1999-08-02
Citation:
Tsai, J., "High Breakdown-Voltage and High-Linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels," SAE Technical Paper 1999-01-2492, 1999, https://doi.org/10.4271/1999-01-2492.
Pages:
5
Abstract:
A high breakdown-voltage and high-linearity field effect transistor based on n-p-n structure, i.e., camel-gate field-effect transistor (CAMFET), has successfully fabricated and demonstrated. The CAMFET employs very thin n+ and p+ layers together with the channel to form a majority-carrier camel diode for modulating the channel current. The breakdown voltage about 21 V is obtained Furthermore, the maximum drain saturation current and transconductance are as high as 770 mA/mm and 220 mS/mm, respectively. Consequently, for the tri-step doping channel CAMFET, not only have the voltage-independent but also the high transconductance are obtained.
Access
Now
SAE MOBILUS Subscriber? You may already have access.
Buy
Select
Price
List
Download
$27.00
Mail
$27.00
Members save up to 40% off list price.
Share
HTML for Linking to Page
Page URL

Related Items

Training / Education
2017-12-18
Training / Education
2018-05-04