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A High-Breakdown Voltage n+-GaAs/δ (p+)-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications

Date Published: 1999-08-02
Paper Number: 1999-01-2494
DOI: 10.4271/1999-01-2494

Citation:

Liu, W., Chang, W., Chen, J., Pan, H. et al., "A High-Breakdown Voltage n+-GaAs/δ (p+)-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications," SAE Technical Paper 1999-01-2494, 1999, doi:10.4271/1999-01-2494.

Author(s):


W. C. Liu - National Cheng-Kung Univ.
W. L. Chang - National Cheng-Kung Univ.
J. Y. Chen - National Cheng-Kung Univ.
H. J. Pan - National Cheng-Kung Univ.
W. C. Wang - National Cheng-Kung Univ.
K. H. Yu - National Cheng-Kung Univ.
S. C. Feng - National Cheng-Kung Univ.

Abstract:

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File Size: 138K

Product Status: In Stock

See papers presented at 34th Intersociety Energy Conversion Engineering Conference, August 1999, Vancouver, BC, CANAD, Session: Aerospace Power Electronics

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