A Triangular-Barrier Optoelectronic Switch with Light-Controllable Performances
Date Published: 1999-08-02
Paper Number:1999-01-2495
DOI: 10.4271/1999-01-2495
Citation:
Guo, D., "A Triangular-Barrier Optoelectronic Switch with Light-Controllable Performances," SAE Technical Paper 1999-01-2495, 1999, doi:10.4271/1999-01-2495.
Author(s):
Der-Feng Guo - Chinese Air Force Academy
Abstract:
A GaAs-InGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), was fabricated. Owing to the avalanche multiplication and carrier confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances were observed in the current-voltage (I-V) characteristics under normal and reverse operation modes. The device showed a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the carrier transport mechanism on illumination was investigated.
Purchase more technical papers and save! With TechSelect,
you decide what SAE Technical Papers you need, when you need them, and how much you want to pay.
Learn more >
