A Triangular-Barrier Optoelectronic Switch with Light-Controllable Performances

Paper #:
  • 1999-01-2495

Published:
  • 1999-08-02
Citation:
Guo, D., "A Triangular-Barrier Optoelectronic Switch with Light-Controllable Performances," SAE Technical Paper 1999-01-2495, 1999, https://doi.org/10.4271/1999-01-2495.
Author(s):
Pages:
5
Abstract:
A GaAs-InGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), was fabricated. Owing to the avalanche multiplication and carrier confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances were observed in the current-voltage (I-V) characteristics under normal and reverse operation modes. The device showed a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the carrier transport mechanism on illumination was investigated.
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