Zth Thermal Modelling of MOSFET in Sub-Milliseconds Range

Paper #:
  • 2004-01-1684

Published:
  • 2004-03-08
Citation:
Tran, T., McDonald, T., Downer, S., Ambrus, J. et al., "Zth Thermal Modelling of MOSFET in Sub-Milliseconds Range," SAE Technical Paper 2004-01-1684, 2004, https://doi.org/10.4271/2004-01-1684.
Pages:
6
Abstract:
1AbstractAn FEA (Finite Element Analysis) model was developed based on the physical dimension of the MOSFET device to produce a Zth curve closely matching the experimental Zth curve. This Finite Element Analysis model would then be extrapolated down to the region beyond the capability of the hardware of the Zth measurement system
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