High Temperature Packaging and Pulse Testing of Parallel SiC Thyristors 2006-01-3106
For fast rise time, high peak current pulse power applications, Silicon Carbide (SiC) is ideal due to its ability to tolerate high localized temperatures generated during switching. Several 4 mm × 4 mm SiC Gate Turn-Off thyristors (GTOs) manufactured by CREE were evaluated. Testing for individual and paired devices was performed under both single and repetitive pulsing using variable pulse duration, ring-down capacitor discharge circuit. At 150 °C, maximum single shot currents as high as 3.2 kA have been shown for single devices at a 50% pulse width of 2 μsec while parallel devices have shown a maximum of 4.4 kA at 150 °C.
Citation: Geil, B., Bayne, S., and O'Brien, H., "High Temperature Packaging and Pulse Testing of Parallel SiC Thyristors," SAE Technical Paper 2006-01-3106, 2006, https://doi.org/10.4271/2006-01-3106. Download Citation
Author(s):
Bruce R. Geil, Stephen B. Bayne, Heather O'Brien
Affiliated:
U.S. Army Research Laboratory, Berkeley Research Associates, U.S. Army Research Laboratory
Pages: 8
Event:
Power Systems Conference
ISSN:
0148-7191
e-ISSN:
2688-3627
Related Topics:
Capacitors
Packaging
Logistics
SAE MOBILUS
Subscribers can view annotate, and download all of SAE's content.
Learn More »
