4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications
Date Published: 2008-11-11
Paper Number:2008-01-2883
DOI: 10.4271/2008-01-2883
Citation:
Veliadis, V., Hearne, H., McNutt, T., Snook, M. et al., "4H-SiC VJFET Based Normally-off Cascode Switches for 300°C Electronic Applications," SAE Int. J. Aerosp. 1(1):973-981, 2009, doi:10.4271/2008-01-2883.
Author(s):
Victor Veliadis - Northrop Grumman Electronic Systems
Harold Hearne - Northrop Grumman Electronic Systems
Ty McNutt - Northrop Grumman Electronic Systems
Megan Snook - Northrop Grumman Electronic Systems
Paul Potyraj - Northrop Grumman Electronic Systems
Aivars Lelis - U.S. Army Research Laboratory
Charles Scozzie - U.S. Army Research Laboratory
Abstract:
Vertical-Junction-Field-Effect-Transistors (VJFETs) are currently the most mature SiC devices for high power/temperature switching. High-voltage VJFETs are typically designed normally-on to ensure voltage control operation at high current-gain. However, to exploit the high voltage/temperature capabilities of VJFETs in a
normally-off
high-current voltage-controlled switch, high-voltage normally-on and low-voltage normally-off VJFETs were connected in the cascode configuration. In this paper, we review the high temperature DC characteristics of VJFETs and 1200 V normally-off cascode switches. The measured parameter shifts in the 25°C to 300°C temperature range are in excellent agreement with theory, confirming fabrication of robust SiC VJFETs and cascode switches.
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