Ning, P., Lai, R., Huff, D., Wang, F. et al., "250 °C SiC Power Module Package Design," SAE Technical Paper 2008-01-2892, 2008, doi:10.4271/2008-01-2892.
Author(s):
Puqi Ning - Virginia Polytechnic Institute and State Univ.
Rixin Lai - Virginia Polytechnic Institute and State Univ.
Daniel Huff - Virginia Polytechnic Institute and State Univ.
Fred Wang - Virginia Polytechnic Institute and State Univ.
Khai D. T. Ngo - Virginia Polytechnic Institute and State Univ.
Abstract:
In order to take full advantage of SiC, a high temperature package for power module using SiC devices was designed, developed, fabricated and tested. The details of the material selection and fabrication process are described. High temperature reliability test and power test shows that the package presented in this paper can perform well at the high junction temperature.
File Size: 369K
Product Status: In Stock
See papers presented at Power Systems Conference, November 2008, Seattle, WA, USA, Session: High-Temperature Electronics - Power Converters / Inverters & Control
Purchase more technical papers and save! With TechSelect,
you decide what SAE Technical Papers you need, when you need them, and how much you want to pay.
Learn more >
