This paper describes the reliability of silicon carbide (SiC) MOSFET. We clarified the relation between the lifetime of the gate oxide and the crystal defects. We fabricated MOS diodes using thermal oxidation and measured their lifetimes by TDDB (Time Dependent Dielectric Breakdown) measurement. The wear-out lifetime is sufficient for hybrid vehicle but many MOS diodes broke in shorter time. The breakdown points were defined by Photo-emission method. Finally, we classified the defects by TEM (Transmission Electron Microscopy). A TSD (Threading Screw Dislocation) plays the most important role in the lifetime degradation of the gate oxide. The lifetime of the gate oxide area, in which a TSD is included, is shorter by two orders of magnitude than a wear-out breakdown. The mechanism by which threading dislocations degrade the gate oxide lifetime was not discovered. To explain the degradation, we assumed two models, the shape effect and the oxide quality degradation.