Automotive MOSFETs Operating in the Safe Operating Area

Paper #:
  • 2015-01-0263

Published:
  • 2015-04-14
DOI:
  • 10.4271/2015-01-0263
Citation:
Puerschel, M., Kiep, A., and Spielman, C., "Automotive MOSFETs Operating in the Safe Operating Area," SAE Technical Paper 2015-01-0263, 2015, doi:10.4271/2015-01-0263.
Pages:
4
Abstract:
The modern day power MOSFET is constructed using the latest technology in order to minimize the drain source resistance. The latest MOSFET technologies are capable of achieving the same drain to source resistance with a smaller MOSFET die than previous generations which will directly lead to increased thermal resistance and limited energy handling capability. This paper will discuss the Safe Operating Area of power MOSFETs and how to assess new MOSFET technology.
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