A smart gate driver with active switching speed control for traction inverters

Paper #:
  • 2017-01-1243

Published:
  • 2017-03-28
Abstract:
Abstract: The gate driver design in traction inverter application needs to consider worst case scenarios which adversely limit the semiconductor devices’ switching speed in its most frequent operation regions. Specifically, when selecting the gate resistors, the IGBT/Diode peak surge voltage induced by fast di/dt and stray inductance must be limited below the device rated voltage under any conditions. The worst cases that have to be considered include both highest dc bus voltage and peak load current. However, the traction inverter operates mainly in low current regions and at bus voltage much lower than the worst case voltage. This paper proposes a low-cost and simple gate driver circuit that can actively adjust the turn-off switching speed based on IGBT current levels. The proposed circuit utilizes the IGBT mirror current sensing pin which is widely used in current generation traction inverters. When the current is low, the switching is speeded up to minimize loss. Under worst cases, it can also keep the maximum surge voltage same as the value in the conventional gate driver design. For applications that the system operates mostly in low current regions, the proposed method can significantly improve the system efficiency.
Also in:
  • SAE International Journal of Alternative Powertrains - V126-8EJ
  • SAE International Journal of Alternative Powertrains - V126-8
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