SiC devices have inherent fast switching capabilities due to their superior material properties, and are considered potential candidates to replace Si devices for traction inverters in electrified vehicles in future. However, SiC devices usually have a lower gate threshold voltage Vg(th) (2-4V) than that of Si devices (6-7V). The characteristics make SiC devices prone to the crosstalk between upper and lower devices especially during fast switching. For example, when a lower device is turning on, the upper device is supposed to be in the off state. However, the gate of upper device may be charged through the parasitic inductance / capacitance and goes beyond gate threshold voltage Vg(th), which results in the false turn-on of upper device. The crosstalk causes excessive switching loss, device overstress, and even device failure. In this paper, the root cause of the crosstalk phenomenon and excessive ringing is identified through experiments. The impact of the critical packaging parasitics on the crosstalk is also investigated. It is concluded that certain positive common source inductance helps to mitigate the crosstalk issues during turn-on/off. Without careful selection of packaging parasitics, SiC devices can be subjected to unstable ringing during switching. Finally several packaging layout methods are proposed to create positive common source inductance for crosstalk mitigation.