High Accuracy Semiconductive Magnetoresistive Rotational Position Sensor

Paper #:
  • 970601

Published:
  • 1997-02-24
Citation:
Ishiai, Y., Jitousho, N., Korechika, T., LeGare, J. et al., "High Accuracy Semiconductive Magnetoresistive Rotational Position Sensor," SAE Technical Paper 970601, 1997, https://doi.org/10.4271/970601.
Pages:
11
Abstract:
Recently there is demand for rotation sensors capable of high-accuracy detection and very low-speed detection of rotation at high temperature for automobile use. To meet this requirement, a rotation sensor using an InSb thin-film magneto-resistors with good thermal stability has been developed.This sensor transduces magnetic flux change due to gear rotation to resistance change. It is composed of InSb thin-film magneto-resistors fabricated by a newly developed process and signal shaping circuits where resistor signals are converted to digital signals using no amplifier. Accordingly, the signals are independent of the measured frequencies, making possible very low speed (0 to 20 Hz) detection. The sensor stably operates in the temperature range from -40 to 150 degree C for thousands hours. There is no need for a shielded harness due to the digital output signal. It can be used for high temperature environments like in the engine compartments for rotation detection of ignition systems, electronically controlled AT systems, antiskid braking systems, etc.
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