Development of Fabrication Technology for MOS-Based Power Switching Devices in SiC 971236
Power switching devices in the wide bandgap semiconductor silicon carbide (SiC) are under development in many laboratories in the United States, Europe, and Japan. Because SiC can be thermally oxidized to form SiO2, it is possible to construct MOS-based power devices such as power MOSFETs, IGBTs, and MCTs in this material. This paper outlines the technical challenges which must be overcome before MOS-based power switching devices in SiC can reach the commercial marketplace.
Citation: Cooper, J., "Development of Fabrication Technology for MOS-Based Power Switching Devices in SiC," SAE Technical Paper 971236, 1997, https://doi.org/10.4271/971236. Download Citation
Author(s):
James A. Cooper
Pages: 5
Event:
SAE Aerospace Power Systems Conference
ISSN:
0148-7191
e-ISSN:
2688-3627
Also in:
SAE Aerospace Power Systems Conference Proceedings-P-307, SAE 1997 Transactions - Journal of Aerospace-V106-1
Related Topics:
Fabrication
Semiconductors
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