Approaches to Obtain Tunable Diode Lasers for Air Monitoring Between 2 and 2.5 μm on InP

Paper #:
  • 981566

Published:
  • 1998-07-13
Citation:
Young, M., Forouchar, S., Keo, S., and Singletery, J., "Approaches to Obtain Tunable Diode Lasers for Air Monitoring Between 2 and 2.5 μm on InP," SAE Technical Paper 981566, 1998, https://doi.org/10.4271/981566.
Pages:
7
Abstract:
Alternative approaches for developing 2.0-2.5 μm single frequency semiconductor lasers are reviewed. Room temperature lasers in this wavelength range are important for the development of absorption spectroscopy instruments used in environmental monitoring and life support for space applications. In spite of significant efforts towards the growth and fabrication of lasers using the GaSb-based material system, room temperature, single frequency lasers in the 2-2.5 μm wavelength range are not yet available. As an alternative to the GaSb-based material system, novel techniques using the mature InP-based material system (which is potentially more suitable for single frequency laser fabrication) are being investigated. These include: highly strained InGaAs quantum well layers, graded buffer layers, laterally confined growth, and InGaAsN quantum well layers. In this paper, we will review the current status and limitations of these techniques to develop ambient temperature, single frequency lasers.
Access
Now
SAE MOBILUS Subscriber? You may already have access.
Buy
Select
Price
List
Download
$27.00
Mail
$27.00
Members save up to 40% off list price.
Share
HTML for Linking to Page
Page URL

Related Items

Training / Education
2017-11-01
Technical Paper / Journal Article
2004-07-19
Book
2008-01-01
Book
2008-07-01
Standard
2013-12-05
Technical Paper / Journal Article
2010-10-25
Standard
1994-03-01
Training / Education
2017-12-18