Technical Paper
MOS Reliability Prediction Model
1970-02-01
700646
The determination of component part failure rates is required for most military contracts normally during the early portion of the program definition phase. For new technology devices whose failure rates have not been established nor available in recognized military documents, it has been impossible to accurately predict the reliability of the system using these new devices. A technique developed by authors enables a prediction to be made for new state-of-the-art devices using a mathematical transfer model. This paper describes a mathematical transfer model using established failure rate data from bipolar integrated circuits (IC). These bipolar devices contain similar characteristics, basic materials, processes, testing, inspection, environmental, physics of failure, and application, to the new device. Failure rates for the new device, large scale array (LSA ) metal-oxide-semiconductor (MOS) are obtained through use of this model.